|Authors:||Danny E. P. Vanpoucke,|
|Journal:||Developments in Strategic Ceramic Materials:
Ceramic Engineering and Science Proceedings 36(8), 169-177 (2016)
(ICACC 2015 conference proceeding)
|Editors:||Waltraud M. Kriven, Jingyang Wang, Dongming Zhu,Thomas Fischer, Soshu Kirihara|
In layered ceramic superconductor architectures, CeO2 buffer layers are known to form micro cracks during the fabrication process. To prevent this crack formation, doping of the CeO2 layer has been suggested. In this theoretical study, the influence of dopants (both tetravalent and aliovalent) on the mechanical and structural properties of CeO2 is investigated by means of density functional theory. Group IVa and IVb dopants show clearly distinct stability, with the former favouring interface and surface doping, while the latter favour uniform bulk doping. This behaviour is linked to the dopant electronic structure. The presence of charge compensating vacancies is shown to complicate the mechanical and structural picture for aliovalent dopants. We find that the vacancies often counteract the dopant modifications of the host material. In contrast, all dopants show an inverse relation between the bulk modulus and thermal expansion coefficient, independent of their valency and the presence of oxygen vacancies. Based on the study of these idealized systems, new dopants are suggested for applications.