Tag: Diamond and Related Materials

Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study

Authors: Danny E. P. Vanpoucke, Shannon S. Nicley, Jorne Raymakers, Wouter Maes, and Ken Haenen
Journal: Diam. Relat. Mater 94, 233-241 (2019)
doi: 10.1016/j.diamond.2019.02.024
IF(2017): 2.232
export: bibtex
pdf: <DiamRelatMater>

 

Spin polarization around the various Eu-defect models in diamond. Blue and red represent the up and down spin channels respectively
Graphical Abstract: Spin polarization around the various Eu-defect models in diamond. Blue and red represent the up and down spin channels respectively.

Abstract

The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative: -1.5 to -2.3 electron. Hybrid-functional electronic-band-structures show the luminescence of the Eu defect to be strongly dependent on the local defect geometry. The 4-coordinated Eu substitutional dopant is the most promising candidate to present the typical Eu3+ luminescence, while the 6-coordinated Eu-vacancy complex is expected not to present any luminescent behaviour. Preliminary experimental results on the treatment of diamond films with Eu-containing precursor indicate the possible incorporation of Eu into diamond films treated by drop-casting. Changes in the PL spectrum, with the main luminescent peak shifting from approximately 614 nm to 611 nm after the growth plasma exposure, and the appearance of a shoulder peak at 625 nm indicate the potential incorporation. Drop-casting treatment with an electronegative polymer material was shown not to be necessary to observe the Eu signature following the plasma exposure, and increased the background
luminescence.

Revisiting the Neutral C-Vacancy in Diamond: Localization of Electrons through DFT+U

Authors: Danny E. P. Vanpoucke and Ken Haenen
Journal: Diam. Relat. Mater 79, 60-69 (2017)
doi: 10.1016/j.diamond.2017.08.009
IF(2017): 2.232
export: bibtex
pdf: <DiamRelatMater>

 

Combining a scan over possible values for U and J with reference electronic structures obtained using the hybrid functional HSE06, DFT+U can be fit to provide hybrid functional quality electronic structures at the cost of DFT calculations.
Graphical Abstract: Combining a scan over possible values for U and J with reference electronic structures obtained using the hybrid functional HSE06, DFT+U can be fit to provide hybrid functional quality electronic structures at the cost of DFT calculations.

Abstract

The neutral C-vacancy is investigated using density functional theory calculations. We show that local functionals, such as PBE, can predict the correct stability order of the different spin states, and that the success of this prediction is related to the accurate description of the local magnetic configuration. Despite the correct prediction of the stability order, the PBE functional still fails predicting the defect states correctly. Introduction of a fraction of exact exchange, as is done in hybrid functionals such as HSE06, remedies this failure, but at a steep computational cost. Since the defect states are strongly localized, the introduction of additional on site Coulomb and exchange interactions, through the DFT+U method, is shown to resolve the failure as well, but at a much lower computational cost. In this work, we present optimized U and J parameters for DFT+U calculations, allowing for the accurate prediction of defect states in defective
diamond. Using the PBE optimized atomic structure and the HSE06 optimized electronic structure as reference, a pair of on-site Coulomb and exchange parameters (U,J) are fitted for DFT+U studies of defects in diamond.

Related:

Poster-presentation: here

DFT+U series (varying J) for a specific spin state of the C-vacancy defect.

DFT+U series (varying J) for a specific spin state of the C-vacancy defect.