Tag: diamond

Jan 09 2025

The impact of strain on the GeV-color center in diamond

Authors: Thijs G.I. van Wijk, E. Aylin Melan, Rani Mary Joy, Emerick Y. Guillaume, Paulius Pobedinskas, Ken Haenen, and Danny E.P. Vanpoucke
Journal: Carbon 234, 119928 (2025)
doi: 10.1016/j.carbon.2024.119928
IF(2024): 10.5
export: bibtex
pdf: <Carbon>

 

Graphical abstract strained GeV0.
Graphical Abstract: Schematic representation of the impact of hydrostatic and linear strain on the Zero Phonon Line of the neutral GeV defect in diamond.

Abstract

Color centers in diamond, such as the GeV center, are promising candidates for quantum-based applications. Here, we investigate the impact of strain on the zero-phonon line (ZPL) position of GeV0. Both hydrostatic and linear strain are modeled using density functional theory for GeV0concentrations of 1.61 % down to 0.10 %. We present qualitative and quantitative differences between the two strain types: for hydrostatic tensile and compressive strain, red- and blue-shifted ZPL positions are expected, respectively, with a linear relation between the ZPL shift and the experienced stress. By calculating the ZPL shift for varying GeV0 concentrations, a shift of 0.15 nm/GPa (0.38 meV/GPa) is obtained at experimentally relevant concentrations using a hybrid functional. In contrast, only red-shifted ZPL are found for tensile and compressive linear strain along the ⟨100⟩ direction. The calculated ZPL shift exceeds that of hydrostatic strain by at least one order of magnitude, with a significant difference between tensile and compressive strains: 3.2 and 4.8 nm/GPa (8.1 and 11.7 meV/GPa), respectively. In addition, a peak broadening is expected
due to the lifted degeneracy of the GeV0 eg state, calculated to be about 6 meV/GPa. These calculated results are placed in perspective with experimental observations, showing values of ZPL shifts and splittings of comparable magnitude.

Permanent link to this article: https://dannyvanpoucke.be/2025-paper-strainedgev-en/

Sep 01 2024

New QuATOMs group member

During the last year, Esin Aylin Melan worked hard at her MSc Thesis within the QuATOMs group. Her research focus was centered on the impact of strain on the zero-phonon-line of the GeV color center in diamond. This work she presented, together with Thijs van Wijk, at the SBDD conference in Hasselt, and was presented as well at both the BPS and EMRS spring meeting of 2024. Before the summer she gave her (very good and enthusiastic) final presentation of the MSc thesis results, bringing her first real research project to good end. (Paper will follow later 🙂 )

Recently, she also received the great news that she was awarded a bilateral PhD Scholarship between UHasselt & UNamur. So from September first, she has started working on the modeling of color centers in diamond and oxides for the coming four years. Welcome to the QuATOMs team, and congratulations on the scholarship. We look forward to the enthusiasm and insights you’ll bring to the team.

Permanent link to this article: https://dannyvanpoucke.be/new-quatoms-group-member/

Mar 06 2024

First-principles investigation of hydrogen-related reactions on (100)–(2×1)∶H diamond surfaces

Authors: Emerick Y. Guillaume, Danny E. P. Vanpoucke, Rozita Rouzbahani, Luna Pratali Maffei, Matteo Pelucchi, Yoann Olivier, Luc Henrard, & Ken Haenen
Journal: Carbon 222, 118949 (2024)
doi: 10.1016/j.carbon.2024.118949
IF(2022): 10.9
export: bibtex
pdf: <Carbon>

 

Graphical Abstract for Carbon publication on the adsorption of H onto diamond.
Graphical Abstract: (left) Ball-and-stick representation of aH adsorption/desorption reaction mediated through a H radical. (right) Monte Carlo estimates of the H coverage of the diamond surface at different temperatures based on quantum mechanically determined reaction barriers and reaction rates.

Abstract

Hydrogen radical attacks and subsequent hydrogen migrations are considered to play an important role in the atomic-scale mechanisms of diamond chemical vapour deposition growth. We perform a comprehensive analysis of the reactions involving H-radical and vacancies on H-passivated diamond surfaces exposed to hydrogen radical-rich atmosphere. By means of first principles calculations—density functional theory and climbing image nudged elastic band method—transition states related to these mechanisms are identified and characterised. In addition, accurate reaction rates are computed using variational transition state theory. Together, these methods provide—for a broad range of temperatures and hydrogen radical concentrations—a picture of the relative likelihood of the migration or radical attack processes, along with a statistical description of the hydrogen coverage fraction of the (100) H-passivated surface, refining earlier results via a more thorough analysis of the processes at stake. Additionally, the migration of H-vacancy is shown to be anisotropic, and occurring preferentially across the dimer rows of the reconstructed surface. The approach used in this work can be generalised to other crystallographic orientations of diamond surfaces or other semiconductors.

Permanent link to this article: https://dannyvanpoucke.be/2024-paper-hadsorption-emerick-en/

Dec 10 2023

Materiomics Chronicles: week 11 & 12

After the exam period in weeks nine and ten, the eleventh and twelfth week of the academic year bring the second quarter of our materiomics program at UHasselt for the first master students. Although I’m not coordinating any courses in this quarter, I do have some teaching duties, including being involved in two of the hands-on projects.

As in the past 10 weeks, the bachelor students in chemistry had lectures for the courses introduction to quantum chemistry and quantum and computational chemistry. For the second bachelor this meant they finally came into contact with the H atom, the first and only system that can be exactly solved using pen and paper quantum chemistry (anything beyond can only be solved given additional approximations.) During the exercise class we investigated the concept of aromatic stabilization in more detail in addition to the usual exercises with simple Schrödinger  equations and wave functions. For the third bachelor, their travel into the world of computational chemistry continued, introducing post-Hartree-Fock methods with also include the missing correlation energy. This is the failure of Hartree-Fock theory, making it a nice framework, but of little practical use for any but the most trivial molecules (e.g. H2 for example already being out of scope). We also started looking into molecular systems, starting with simple diatomic molecules like H2+.

SnV split vacancy defect in diamond.

SnV split vacancy defect in diamond.

In the master materiomics, the course Machine learning and artificial intelligence in modern materials science hosted a guest lecture on Large Language Models, and their use in materials research as well as an exercise session during which the overarching ML study of the QM9 dataset was extended. During the course on  Density Functional Theory there was a second lab, this time on conceptual DFT. For the first master students, the hands-on project kept them busy. One group combining AI and experiments, and a second group combining DFT modeling of SnV0 defects in diamond with their actual lab growth. It was interesting to see the enthusiasm of the students. With only some mild debugging, I was able to get them up and running relatively smoothly on the HPC. I am also truly grateful to our experimental colleagues of the diamond growth group, who bravely set up these experiments and having backup plans for the backup plans.

At the end of week 12, we added another 12h of classes, ~1h of video lecture, ~2h of HPC support for the handson project and 6h of guest lectures, putting our semester total at 118h of live lectures. Upwards and onward to weeks 13 & 14.

Permanent link to this article: https://dannyvanpoucke.be/materiomics-chronicles-week-11-12/

Apr 21 2022

Localized vibrational modes of GeV-centers in diamond: Photoluminescence and first-principles phonon study

Authors: Kirill N. Boldyrev, Vadim S. Sedov, Danny E.P. Vanpoucke, Victor G. Ralchenko, & Boris N. Mavrin
Journal: Diam. Relat. Mater 126, 109049 (2022)
doi: 10.1016/j.diamond.2022.109049
IF(2020): 3.315
export: bibtex
pdf: <DRM>

 

GeV split vacancy defect in diamond and the phonon modes near the ZPL.
Graphical Abstract: GeV split vacancy defect in diamond and the phonon modes near the ZPL.

Abstract

The vibrational behaviour of the germanium-vacancy (GeV) in diamond is studied through its photoluminescence spectrum and first-principles modeled partial phonon density of states. The former is measured in a region below 600 cm−1. The latter is calculated for the GeV center in its neutral, charged, and excited state. The photoluminescence spectrum presents a previously unobserved feature at 248 cm−1 in addition to the well-known peak at 365 cm−1. In our calculations, two localized modes, associated with the GeV center and six nearest carbon atoms (GeC6 cluster) are identified. These correspond to one vibration of the Ge ion along with the [111] orientation of the crystal and one perpendicular to this direction. We propose these modes to be assigned to the two features observed in the photoluminescence spectrum. The dependence of the energies of the localized modes on the GeV-center and their manifestation in experimental optical spectra is discussed.

Permanent link to this article: https://dannyvanpoucke.be/paper_gevpldft_vadim-en/

Oct 22 2020

Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

Authors:  Rozita Rouzbahani, Shannon S.Nicley, Danny E.P.Vanpoucke, Fernando Lloret, Paulius Pobedinskas, Daniel Araujo, Ken Haenen
Journal: Carbon 172, 463-473 (2021)
doi: 10.1016/j.carbon.2020.10.061
IF(2019): 8.821
export: bibtex
pdf: <Carbon>

 

Graphical Abstract B doped diamond
Graphical Abstract: Artist impression of B incorporation during CVD growth of diamond.

Abstract

The methane concentration dependence of the plasma gas phase on surface morphology and boron incorporation in single crystal, boron-doped diamond deposition is experimentally and computationally investigated. Starting at 1%, an increase of the methane concentration results in an observable increase of the B-doping level up to 1.7×1021 cm−3, while the hole Hall carrier mobility decreases to 0.7±0.2 cm2 V−1 s−1. For B-doped SCD films grown at 1%, 2%, and 3% [CH4]/[H2], the electrical conductivity and mobility show no temperature-dependent behavior due to the metallic-like conduction mechanism occurring beyond the Mott transition. First principles calculations are used to investigate the origin of the increased boron incorporation. While the increased formation of growth centers directly related to the methane concentration does not significantly change the adsorption energy of boron at nearby sites, they dramatically increase the formation of missing H defects acting as preferential boron incorporation sites, indirectly increasing the boron incorporation. This not only indicates that the optimized methane concentration possesses a large potential for controlling the boron concentration levels in the diamond, but also enables optimization of the growth morphology. The calculations provide a route to understand impurity incorporation in diamond on a general level, of great importance for color center formation.

Permanent link to this article: https://dannyvanpoucke.be/paper_bdoping-en/

Apr 22 2020

Partitioning the vibrational spectrum: Fingerprinting defects in solids

Authors:  Danny E. P. Vanpoucke
Journal: Computational Materials Science 181, 109736 (2020)
doi: 10.1016/j.commatsci.2020.109736
IF(2019): 2.863
export: bibtex
pdf: <ComputMaterSci>   (Open Access)
github: <Hive-toolbox>

 

Graphical abstract Computational Materials Science 181, 109736 (2020)
Graphical Abstract: Finger printing defects in diamond through the creation of the vibrational spectrum of a defect.

Abstract

Vibrational spectroscopy techniques are some of the most-used tools for materials
characterization. Their simulation is therefore of significant interest, but commonly
performed using low cost approximate computational methods, such as force-fields.
Highly accurate quantum-mechanical methods, on the other hand are generally only used
in the context of molecules or small unit cell solids. For extended solid systems,
such as defects, the computational cost of plane wave based quantum mechanical simulations
remains prohibitive for routine calculations. In this work, we present a computational scheme
for isolating the vibrational spectrum of a defect in a solid. By quantifying the defect character
of the atom-projected vibrational spectra, the contributing atoms are identified and the strength
of their contribution determined. This method could be used to systematically improve phonon
fragment calculations. More interestingly, using the atom-projected vibrational spectra of the
defect atoms directly, it is possible to obtain a well-converged defect spectrum at lower
computational cost, which also incorporates the host-lattice interactions. Using diamond as
the host material, four point-defect test cases, each presenting a distinctly different
vibrational behaviour, are considered: a heavy substitutional dopant (Eu), two intrinsic
point-defects (neutral vacancy and split interstitial), and the negatively charged N-vacancy
center. The heavy dopant and split interstitial present localized modes at low and high
frequencies, respectively, showing little overlap with the host spectrum. In contrast, the
neutral vacancy and the N-vacancy center show a broad contribution to the upper spectral range
of the host spectrum, making them challenging to extract. Independent of the vibrational behaviour,
the main atoms contributing to the defect spectrum can be clearly identified. Recombination of
their atom-projected spectra results in the isolated spectrum of the point-defect.

Permanent link to this article: https://dannyvanpoucke.be/paper_vibrdefect-en/

Apr 01 2019

Universiteit Van Vlaanderen

  • Filed under blog

  • April 1, 2019

A bit over 1 month ago, I told you about my adventure at the film studio of “de Universiteit Van Vlaanderen“. Today is the day the movie is officially released. You can find it at the website of de Universiteit Van Vlaanderen: Video. The video is in Dutch as this is a science-communication platform aimed at the local population, presenting the expertise available at our local universities.

 

In addition to this video, I was asked by Knack magazine to write a piece on the topic presented. As computational research is my central business I wrote a piece on the subject introducing the general public to the topic. The piece can be read here (in Dutch).

And of course, before I forget, this weekend there was also the half-yearly daylight saving exercise with our clocks.[and in Dutch]

 

Permanent link to this article: https://dannyvanpoucke.be/universiteit-van-vlaanderen/

Mar 29 2019

Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study

Authors: Danny E. P. Vanpoucke, Shannon S. Nicley, Jorne Raymakers, Wouter Maes, and Ken Haenen
Journal: Diam. Relat. Mater 94, 233-241 (2019)
doi: 10.1016/j.diamond.2019.02.024
IF(2019): 2.650
export: bibtex
pdf: <DiamRelatMater>

 

Spin polarization around the various Eu-defect models in diamond. Blue and red represent the up and down spin channels respectively
Graphical Abstract: Spin polarization around the various Eu-defect models in diamond. Blue and red represent the up and down spin channels respectively.

Abstract

The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative: -1.5 to -2.3 electron. Hybrid-functional electronic-band-structures show the luminescence of the Eu defect to be strongly dependent on the local defect geometry. The 4-coordinated Eu substitutional dopant is the most promising candidate to present the typical Eu3+ luminescence, while the 6-coordinated Eu-vacancy complex is expected not to present any luminescent behaviour. Preliminary experimental results on the treatment of diamond films with Eu-containing precursor indicate the possible incorporation of Eu into diamond films treated by drop-casting. Changes in the PL spectrum, with the main luminescent peak shifting from approximately 614 nm to 611 nm after the growth plasma exposure, and the appearance of a shoulder peak at 625 nm indicate the potential incorporation. Drop-casting treatment with an electronegative polymer material was shown not to be necessary to observe the Eu signature following the plasma exposure, and increased the background
luminescence.

Permanent link to this article: https://dannyvanpoucke.be/paper_eudopingdrmspecial2018-en/

Mar 18 2019

SBDD XXIV: Diamond workshop

  • Filed under blog

  • March 18, 2019

The participants to SBDD XXIV of 2019.  (courtesy of Jorne Raymakers, SBDD XXIV secretary) 

 

Last week the 24th edition of the Hasselt diamond workshop took place (this year chaired by Christoph Becher). It’s already the fourth time, since 2016, I have attended this conference, and each year it is a joy to meet up with the familiar faces of the diamond research field. The program was packed, as usual. And this year the NV-center was again predominantly present as the all-purpose quantum defect in diamond. I keep being amazed at how much it is used (although it has a rather low efficiency) and also about how many open question remain with regard to its incorporation during growth. With a little luck, you may read more about this in the future, as it is one of a few dozen ideas and questions I want to investigate.

A very interesting talk was given by Yamaguchi Takahide, who is combining hexagonal-BN and H-terminated diamond for high performance electronic devices. In such a device the h-BN leads to the formation of a 2D hole-gas at the interface (i.e., surface transfer doping), making it interesting for low dimensional applications. (And it of course hints at the opportunities available with other 2D materials.) The most interesting fact, as well as the most mind-boggling to my opinion, was the fact that there was no clear picture of the atomic structure of the interface. But that is probably just me. For experiments, nature tends to make sure everything is alright, while we lowly computational materials artificers need to know where each and every atom belongs. I’ll have to make some time to find out.

A second extremely interesting presentation was given by Anke Krueger (who will be the chair of the 25th edition of SBDD next year), showing of her groups skill at creating fluorine terminated diamond…without getting themselves killed. The surface termination of diamond with fluorine comes with many different hazards, going from mere poisoning, to fire and explosions. The take-home message: “kids don’t try this at home”. Despite all this risky business, a surface coverage of up to 85% was achieved, providing a new surface termination for diamond, with a much stronger trapping of negative charges near the surface, ideal for forming negatively charged NV centers.

On the last day, Rozita Rouzbahani presented our collaboration on the growth of B doped diamond. She studied the impact of growth conditions on the B concentration and growth speed of B doped diamond surfaces. My computational results corroborate her results and presents the atomic scale mechanism resulting in an increased doping concentration upon increased growth speed. I am looking forward to the submission of this nice piece of research.

And now, we wait another year for the next edition of SBDD, the celebratory 25th edition with a focus on diamond surfaces.

Permanent link to this article: https://dannyvanpoucke.be/sbdd-xxiv-diamond-workshop/